EMH10 / umh10n / imh10a transistors general purpose (dual digital transistors) EMH10 / umh10n / imh10a z z f eatures 1) two dtc123j chips in a emt or umt or smt package. 2) mounting possible with emt3 or umt3 or smt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. z z z z structure epitaxial planar type npn silicon transistor (built-in resistor type) the following characteristics apply to both dtr 1 and dtr 2 . z z equivalent circuit r 1 =2.2k? r 2 =47k? r 1 =2.2k? r 2 =47k? dtr 2 dtr 1 (3) (2) (1) (4) (5) (6) r 1 r 2 r 2 r 1 dtr 2 dtr 1 (4) (5) (6) (3) (2) (1) r 1 r 2 r 2 r 1 EMH10 / umh10n imh10a z z z z packaging specifications umh10n EMH10 type imh10a tn 3000 t2r 8000 ?? ? ?? ? t110 3000 package code basic ordering unit (pieces) taping z z ex ternal dimensions (units : mm) rohm : emt6 rohm : smt6 eiaj : sc-74 EMH10 imh10a rohm : umt6 eiaj : sc-88 umh10n abbreviated symbol : h10 abbreviated symbol : h10 abbreviated symbol : h10 each lead has same dimensions 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ( 3 ) ( 6 ( 4 0.13 0.5 0.5 0.5 1.0 1.6 each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) each lead has same dimensions ( 6 ) ( 5 ) ( 4 ) 0 3to0 6 0.15 0.3 1.1 0.8 0to0.1 ( 3 ) 2.8 1.6 1.9 2.9 0.95 ( 2 ) 0.95 ( 1 )
EMH10 / umh10n / imh10a transistors z z a bsolute maximum ratings (ta=25 c) supply voltage input voltage output current storage temperature power dissipation ? 1 120mw per element must not be exceeded. ? 2 200mw per element must not be exceeded. parameter symbol limits unit v cc 50 v v in 12 v ?5 i o 100 ma i c (max.) 100 ma tstg ?55~+150 c pd EMH10,umh10n 150 (total) mw imh10a 300 (total) ? 1 ? 2 z z el ectrical characteristics (ta=25 c) parameter symbol i i v i (off) v i (on) v o (on) i o (off) r 1 g i r 2 /r 1 min. ? 1.1 ? ? ? 1.54 80 17 ? ? 0.1 ? ? 2.2 ? 21 0.5 ? 0.3 3.6 0.5 2.86 ? 26 v v cc =5v, i o =100a v o =0.3v, i o =5ma i o /i i =5ma/0.25ma v i =5v v cc =50v, v i =0v ? v o =5v, i o =10ma v ma a k? ? ?? typ. max. unit conditions f t ? 250 ? v ce =10ma, i e =?5ma, f=100mhz ? mhz input voltage output voltage input current output current input resistance dc current gain transition frequency resistance ratio ? transition frequency of the device z z el ectrical characteristic curves input voltage : v i (on) (v) output current : i o (a) 100 200 500 1m 2m 5m 10m 20m 50m 100m 100 50 20 10 5 2 1 500m 200m 100m v o =0.3v ta=?40c 25c 100c fig.1 input voltage vs. output current (on characteristics) input voltage : v i (off) (v) output current : io (a) 0 3.0 10m 1 2m 5m 1m 200 500 100 20 50 10 2 5 0.5 1.0 1.5 2.0 2.5 v cc =5v ta=100c 25c ?40c fig.2 output current vs. input voltage (off characteristics) output current : i o (a) dc current gain : g i 1k 500 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m 100m v o =5v ta=100c 25c ?40c fig.3 dc current gain vs. output current
EMH10 / umh10n / imh10a transistors output current : i o (a) output voltage : v o (on) (v) 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m l o /l i =20 ta=100 c 25 c 40 c fig.4 output voltage vs. output current
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